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Two-dimensional (2D) topological insulators (TIs) hold great promise for future quantum information technologies. Among the 2D-TIs, the TiNI monolayer has recently been proposed as an ideal material for achieving the quantum spin Hall effect at room temperature. Theoretical predictions suggest a sizable bandgap due to the spin–orbit coupling (SOC) of the electrons at and near the Fermi level with a nontrivial  2 topology of the electronic states, which is robust under external strain. However, our detailed first-principles calculations reveal that, in contrast to these predictions, the TiNI monolayer has a trivial bandgap in the equilibrium state with no band inversion, despite SOC opening the bandgap. Moreover, we show that electron correlation effects significantly impact the topological and structural stabilities of the system under external strains. We employed a range of density functional theory (DFT) approaches, including HSE06, PBE0, TB-mBJ, and GGA+ U , to comprehensively investigate the nontrivial topological properties of this monolayer. Our results demonstrate that using general-purpose functionals such as PBE-GGA for studying TIs can lead to false predictions, potentially misleading experimentalists in their efforts to discover new TIs. 

In this study, we investigate the enhancement of exchange bias in core/shell/shell structures by synthesizing single inverted core/shell (Co-oxide/Co) and core/shell/shell (Co-oxide/Co/Co-oxide) nanostructures through a two-step reduction and oxidation method. We evaluate the magnetic properties of the structures and study the effect of shell thickness on the exchange bias by synthesizing various shell thicknesses of Co-oxide/Co/Co-oxide nanostructures. The extra exchange coupling formed at the shell–shell interface in the core/shell/shell structure leads to a remarkable increase in the coercivity and the strength of the exchange bias by three and four orders, respectively. The strongest exchange bias is achieved for the sample comprising the thinnest outer Co-oxide shell. Despite the general declining trend of the exchange bias with Co-oxide shell thickness, we also observe a nonmonotonic behavior in which the exchange bias oscillates slightly as the shell thickness increases. This phenomenon is ascribed to the dependence of the antiferromagnetic outer shell thickness variation at the expense of the simultaneous opposite variation in the ferromagnetic inner shell. 

Bismuth telluride-based thin films have been investigated as the active material in flexible and micro thermoelectric generators (TEGs) for near room-temperature energy harvesting applications. The latter is a class of compact printed circuit board compatible devices conceptualized for operation at low-temperature gradients to generate power for wireless sensor nodes (WSNs), the fundamental units of the Internet-of-Things (IoT). CMOS and MEMS compatible micro-TEGs require thin films that can be integrated into the fabrication flow without compromising their thermoelectric properties. We present results on the thermoelectric properties of (Bi,Sb)2(Se,Te)3 thin films deposited via thermal evaporation of ternary compound pellets on four-inch SiO2 substrates at room temperature. Thin-film compositions and post-deposition annealing parameters are optimized to achieve power factors of 2.75 mW m−1 K−2 and 0.59 mW m−1 K−2 for p-type and n-type thin films. The measurement setup is optimized to characterize the thin-film properties accurately. Thin-film adhesion is further tested and optimized on several substrates. Successful lift-off of p-type and n-type thin films is completed on the same wafer to create thermocouple patterns as per the target device design proving compatibility with the standard MEMS fabrication process.