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Abstract This study investigates the structural, electronic, and magnetic properties of XBr₂, XI₂, and XBrI (X = Mn, Co) compounds using density functional theory, incorporating spin–orbit coupling and the GGA + U framework. Cohesive and formation energy calculations reveal that MnBr₂is most stable in the ferromagnetic phase, while the other compounds favor antiferromagnetic ordering. The inclusion of the effective Coulomb screening potential (U_eff) enhances the localization of 3d orbitals, leading to increased magnetic moments. Electronic structure analyses show that most compounds transition to semiconducting behavior in the antiferromagnetic phase—except CoI₂—while MnBr₂, CoBr₂, and CoI₂exhibit half-metallicity in the ferrimagnetic phase. In the antiferromagnetic phase, MnBr₂, MnI₂, and MnBrI display topological Dirac-like points between theRand Γ points, suggesting the presence of massless fermions and enabling phenomena such as the quantum Hall effect and ultra-high carrier mobility. The computational results are consistent with available experimental data, highlighting the potential of Mn- and Co-based van der Waals compounds for spintronic and quantum applications. 

The present work investigates the interfacial and atomic layer-dependent mechanical properties, SOC-entailing phonon band structure, and comprehensive electron-topological–elastic integration of ZrTe2 and NiTe2. The anisotropy of Young’s modulus, Poisson’s ratio, and shear modulus are analyzed using density functional theory with the TB-mBJ approximation. NiTe2 has higher mechanical property values and greater anisotropy than ZrTe2. Phonon dispersion analysis with SOC effects predicts the dynamic stability of both compounds. Thus, the current research unifies electronic band structure analysis, topological characterization, and elastic property calculation to reveal how these transition metal dichalcogenides are influenced by their structural, electronic, and mechanical properties. The results obtained in this work can be used in the further development of spintronic and nanoelectronic devices. 

This paper investigates the microscale engineering aspects of n-type doped GaSb to address the challenges associated with achieving high electrical conductivity and precise dopant distribution in this semiconductor material. AC impedance spectroscopy is employed as a reliable technique to characterize the microstructural and electrical properties of GaSb, providing valuable insights into the impact of grain boundaries on overall electrical performance. The uneven distribution of dopants, caused by diffusion, and the incomplete activation of introduced dopants pose significant obstacles in achieving consistent material properties. To overcome these challenges, a careful selection of alloying elements, such as bismuth, is explored to suppress the formation of native acceptor defects and modulate band structures, thereby influencing the doping and compensator formation processes. Additionally, the paper examines the effect of microwave annealing as a potential solution for enhancing dopant activation, minimizing diffusion, and reducing precipitate formation. Microwave annealing shows promise due to its rapid heating and shorter processing times, making it a viable alternative to traditional annealing methods. The study underscores the need for a stable grain boundary passivation strategy to achieve significant improvements in GaSb material performance. Simple grain size reduction strategies alone do not result in better thermoelectric performance, for example, and increasing the grain boundary area per unit volume exacerbates the issue of free carrier compensation. These findings highlight the complexity of achieving optimal doping in GaSb materials and the importance of innovative analytical techniques and controlled doping processes. The comprehensive exploration of n-type doped GaSb presented in this research provides valuable insights for future advancements in the synthesis and optimization of high-conductivity nanostructured n-type GaSb, with potential applications in thermoelectric devices and other electronic systems.